ChangXin Technology completes 6th-gen DRAM engineering samples on 4F² platform
Briefing by News4U · First published
ChangXin Technology announced on 30 October that its sixth-generation DRAM platform, built on the 4F² vertical-channel architecture, has completed engineering-sample verification, following key breakthroughs in the design. The company also reported that its fifth-generation platform has entered volume production, delivering at least 50% more dies per wafer than the prior node, and that LPDDR6 products have reached mass production. ChangXin plans to send the first DDR5 RDIMM samples using the 4F² architecture to customers by year-end, initially targeting server applications. [1] [2]
Sources
- 快讯
Wall Street CN · · Full text
- 长鑫科技：基于 4F² 架构的第六代技术平台 DRAM 完成工程样片验证
ITHome · · Summary only